Vias in composite IC chip structures

ABSTRACT

A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

CLAIM OF PRIORITY

This application is a Divisional of, and claims the benefit of priorityto U.S. patent application Ser. No. 16/586,158, filed Sep. 27, 2019,titled “VIAS IN COMPOSITE IC CHIP STRUCTURES”, which is incorporated byreference in its entirety for all purposes.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. patent application Ser. No.16/586,145, filed on Sep. 27, 2019, entitled “COMPOSITE IC CHIPSINCLUDING A CHIPLET EMBEDDED WITHIN METALLIZATION LAYERS OF A HOST ICCHIP”, and to U.S. patent application Ser. No. 16/586,167, filed Sep.27, 2019, entitled “PACKAGED DEVICE WITH A CHIPLET COMPRISING MEMORYRESOURCES”.

BACKGROUND

Monolithic silicon fabrication methods may result in certainrestrictions of device architecture that may limit the performance ofthe final product. Heterogeneous integration where independentlyfabricated dies are integrated within the same package (according tomulti-chip packaging, wafer stacking, or die stacking techniques) maysuffer high fabrication costs, lower insertion efficiencies, and largez-heights.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the disclosure will be understood more fully from thedetailed description given below and from the accompanying drawings ofvarious embodiments of the disclosure, which, however, should not betaken to limit the disclosure to the specific embodiments, but are forexplanation and understanding only. Views labeled “cross-sectional”,“profile”, “plan”, and “isometric” correspond to orthogonal planeswithin a Cartesian coordinate system. Thus, cross-sectional and profileviews are taken in the x-z plane, plan views are taken in the x-y plane,and isometric views are taken in a 3-dimensional Cartesian coordinatesystem (x-y-z). Where appropriate, drawings are labeled with axes toindicate the orientation of the figure.

FIG. 1A illustrates a cross sectional view in the x-z plane of acomposite chip structure, according to some embodiments of thedisclosure.

FIG. 1B illustrates a cross-sectional view in the x-z plane of acomposite chip structure, according to some embodiments of thedisclosure.

FIG. 2A illustrates a cross-sectional view in the x-z plane of acomposite chip structure, according to some embodiments of thedisclosure.

FIG. 2B illustrates a cross-sectional view in the x-z plane of acomposite chip, according to some embodiments of the disclosure.

FIGS. 3A and 3B illustrate an exemplary process flow chart summarizing amethod for fabrication of a chiplet, according to some embodiments ofthe disclosure.

FIGS. 4A, 4B, 4C, 4D, 4E, 4F, and 4G illustrate the evolution of theprocess for formation of the chiplet as summarized in flowchart shown inFIGS. 3A-3B, in a series of cross-sectional views in the x-z plane,according to some embodiments of the disclosure.

FIG. 5 illustrates a process flow chart summarizing a chiplet attachprocess, according to some embodiments of the disclosure

FIGS. 6A, 6B, 6C, 6D, 6E, and 6F illustrate a method of manufacture of acomposite chip structure summarized by the process flow chart in FIG. 5, according to some embodiments of the disclosure.

FIG. 7A illustrates a cross-sectional view in the x-z plane of acomposite chip structure, according to some embodiments of thedisclosure.

FIG. 7B illustrates a cross-sectional view of a composite chip structurecomprising alignment compensation vias, according to some embodiments ofthe disclosure.

FIG. 7C illustrates a cross-sectional view of composite chip embedded ina thick metallization layer, according to some embodiments of thedisclosure.

FIG. 8A illustrates a cross-sectional view of a composite chip structurecomprising cantilevered vias, according to some embodiments of thedisclosure.

FIG. 8B illustrates a plan view in the x-y plane of a composite diestructure having chiplet symmetrically aligned with cantilevered vias,according to some embodiments of the disclosure.

FIG. 8C illustrates a plan view in the x-y plane of composite diestructure, having some misalignment of chiplet with respect tocantilevered vias, according to some embodiments of the disclosure.

FIG. 9 illustrates a process flow chart summarizing an exemplary methodfor making a composite chip structure, according to some embodiments ofthe disclosure.

FIGS. 10A, 10B, 10C, 10D, and 10E illustrate cross-sectional views inthe x-z plane of an exemplary process for making a composite chipstructure summarized in the process flow shown in FIG. 9 , according tosome embodiments of the disclosure.

FIG. 11 illustrates a block diagram of a computing device as part of asystem-on-chip (SoC) package comprising a composite chip structure in animplementation of a computing device, according to some embodiments ofthe disclosure.

DETAILED DESCRIPTION

Reference in the specification to “an embodiment,” “one embodiment,”“some embodiments,” or “other embodiments” means that a particularfeature, structure, or characteristic described in connection with theembodiments is included in at least some embodiments, but notnecessarily all embodiments. The various appearances of “an embodiment,”“one embodiment,” or “some embodiments” are not necessarily allreferring to the same embodiments. If the specification states acomponent, feature, structure, or characteristic “may,” “might,” or“could” be included, that particular component, feature, structure, orcharacteristic is not required to be included. If the specification orclaim refers to “a” or “an” element, that does not mean there is onlyone of the elements. If the specification or claims refer to “anadditional” element, that does not preclude there being more than one ofthe additional element.

The term “microprocessor” generally refers to an integrated circuit (IC)package comprising a central processing unit (CPU) or microcontroller.The microprocessor package is referred to as a “microprocessor” in thisdisclosure. A microprocessor socket receives the microprocessor andcouples it electrically to a printed circuit board (PCB).

Here, the term “back end of the line (BEOL) generally refers topost-device fabrication operations on a semiconductor wafer. Afterformation of the active and passive devices within a circuit layer onthe semiconductor wafer in a front-end of the fabrication line (e.g.,front-end-of-the line or FEOL), a series of operations where metalfeatures are formed (metallization) over the semiconductor devicescomprise the BEOL portion of the fabrication line.

Here, the term “chiplet” generally refers to a small, thin die embeddedin the BEOL metallization of a larger host die. In the describedembodiments, chiplets share metallization levels with the host die, andmay share dielectric materials. Chiplets may carry specializedintegrated circuits, for example, clocking circuits, active repeaterbanks for long-distance on-die interconnects, etc.

The meaning of “a,” “an,” and “the” include plural references. Themeaning of “in” includes “in” and “on.” The vertical orientation is inthe z-direction and it is understood that recitations of “top”,“bottom”, “above” “over” and “below” refer to relative positions in thez-dimension with the usual meaning. Generally, “top”, “above”, and“over” refer to a superior position on the z-dimension, whereas“bottom”, “below” and “under” refer to an inferior position on thez-dimension. The term “on” is used in this disclosure to indicate thatone feature or object is in a superior position relative to an inferiorfeature or object, and in direct contact therewith. However, it isunderstood that embodiments are not necessarily limited to theorientations or configurations illustrated in the figure.

The terms “substantially,” “close,” “approximately,” “near,” and“about,” generally refer to being within +/−10% of a target value(unless specifically specified). Unless otherwise specified the use ofthe ordinal adjectives “first,” “second,” and “third,” etc., to describea common object, merely indicate that different instances of likeobjects are being referred to, and are not intended to imply that theobjects so described must be in a given sequence, either temporally,spatially, in ranking or in any other manner.

For the purposes of the present disclosure, phrases “A and/or B” and “Aor B” mean (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

Described herein is an integrated circuit device structure comprisingsmall embedded chips (dies) within metallization levels on a host chip(die). The small chips, hereinafter referred to as chiplets, areembedded within a multi-level metallization stack on the host chip andfunction as auxiliary integrated circuits that perform functions withthe host chip. The resulting composite structure may be handled as amonolithic composite chip and assembled into a package using standardpackage assembly tools and procedures. In some embodiments, one or morechiplets are embedded at lower metallization levels, proximal to theactive layer of the host chip.

A composite IC chip architecture enables high density interconnectionbetween chiplet and host chip, as the chiplet may be incorporated intothe metallization stack close to the active layer of the host chip. Insome embodiments, the chiplet may be directly bonded to the host chip,for example by hybrid bonding, where fine-pitch interconnect structureson both chiplet and host chip are directly bonded together by metalinterdiffusion.

The chiplet(s) may be partially or fully fabricated separately from thehost chip. Partially or completely fabricated chiplets may be singulatedfrom a wafer, and placed on the host chip wafer by a pick-and-placeoperation at a particular stage of BEOL metallization. Any alignmentimprecision for fine features that result may be compensated byincluding a metallization stack on the chiplets, where feature pitchincreases from inner (lower) to outer (upper) metallization levels.Coarser features in an outermost metallization level of the chiplet maymatch feature pitches on an outermost metal level on the host chip,allowing some degree of offset between chiplet and host die interconnectfeatures.

Signal and power to circuitry on host chip that is directly under thechiplet(s), may be routed through conductive vias that extend throughthe device layer of the chiplet. These vias may interconnect frontsideand backside metallization of the chiplet, and may improve delivery ofpower and input/output (I/O) signals to circuit on the host chipshadowed by the chiplet. In some embodiments, through-chiplet viasextend through the device layer of the chiplet (e.g., through-devicelayer vias, TDVs). TDVs may be formed in the chiplets at wafer levelbefore singulation and attachment on the host die. In alternativeembodiments, TDVs may be formed in the individual chiplets in apost-attach process. Direct vertical routing enabled by the TDVs mayreduce parasitic loss for both power and high-speed data signals routedthroughout the composite IC chip.

Depending on the type and density of circuitry within the active layeron the chiplet(s) and host die, embodiments of TDVs may have relativelysmall or large cross-sections. As an example, a chiplet may comprise ahigh-density device layer comprising a high-density array oftransistors, where transistor gate terminals may have feature pitchesranging between 50 and 100 nm. TDVs extending through the device layerof the chiplet may reduce the active device density within the activelayer of the chiplet by excluding formation of transistors or passivestructures such as metal features within a perimeter that surrounds theindividual vias, referred to as a keep-out zone. To minimize impact onthe device density of the chiplets, TDVs may have diameters rangingbetween 50 and 1000 nm (generally sub-micron). Sub-micron via diametersmay be realized by thinning the bulk semiconductor material of thechiplet to a few microns prior to forming the through-chiplet vias byetching and chemical deposition processes.

For small numbers of through-connections, large through-chiplet vias(e.g., having diameters larger than 1000 nm) may be fabricated through achiplet device layer with minimal disruption of a device layer that hasrelatively low transistor densities. Large-diameter through-chiplet viasmay allow for a significant degree of chiplet misalignment.

Large vias may also be fabricated around the chiplet instead of throughit. Such “cantilevered” vias may be formed as vertical routing planeswithin the host chip back-end-of-the-line (BEOL) metallization layers.The cantilevered vias may be immediately adjacent to the sidewalls ofthe chiplet to minimize conductor length and therefore signal pathresistance. Cantilevered vias may be fabricated as rectangular pillarsadjacent to the sidewalls of the chiplet, where the rectangularcantilevered vias extend along the lateral and vertical dimensions ofthe sidewalls, and outwardly from the chiplet sidewalls a distancecovering up to several microns, forming a relatively thick, continuousmetal (e.g., copper) sheet. The cantilevered vias may couple tometallization levels above and below the chiplet. In some embodiments,the cantilevered vias may couple to chiplet metallization levels inaddition to host chip metallization levels. The cantilevered vias mayprovide improved power delivery over through-chiplet vias, as the thickcontinuous sheets of metal may have significantly less electricalresistance than small diameter vias. Larger power levels may then to becoupled to the host chip.

FIG. 1A illustrates a cross sectional view in the x-z plane of compositechip structure 100, according to some embodiments of the disclosure.

Composite chip structure 100 comprises chiplet 101 integrated on hostchip 102. Host chip 102 comprises a BEOL metallization level stack 103on device layer 104 over substrate 105. In some embodiments, devicelayer 104 and substrate 105 comprise semiconductor materials such as,but not limited to silicon (Si), germanium (Ge), silicon germanium(SiGe), gallium arsenide (GaAs), gallium phosphide (GaP), galliumnitride (GaN), gallium indium nitride (GaInN), or indium phosphide(InP). In some embodiments, substrate 105 is a silicon on insulator(SOI) chip, having a buried oxide (BOX) layer several microns below thesurface. Device layer 104 may be formed in the semiconductor materialabove the BOX layer. Device layer 104 may have a thickness ranging up to100 to 1000 nm, and is integral with substrate 105, which may have athickness ranging up to 500 microns.

Host chip BEOL metallization levels 103 comprise a stack of one or moreconductive layers 106 interleaved between multiple dielectric layers107. A first conductive layer 106 (M1) is proximal to device layer 104.Features within M1 may be interconnected to components (e.g., transistorterminals) within device layer 104 through vias extending through afirst interlayer dielectric layer (ILD1). In the illustrated example,ILD2 is above M1, and is the first ILD of BEOL stack 103.

In some embodiments, conductive layers 106 comprise metals such as, butnot limited to, copper, copper-aluminum alloy, aluminum, silver, gold,nickel, indium, and tungsten, cobalt, tungsten, tantalum, and titanium.Interlayer dielectric (ILD) layers 107 comprise materials such as, butare not limited to, silicon oxides (e.g., SixO1−x), silicon nitrides(e.g., SixN(1−x)), silicon oxynitrides (e.g., SiOxN(1−x)), siliconcarbide (e.g., SiC) and silicon carbide nitrides (e.g., SiCxN1−x),aluminum oxides, and aluminum nitrides. In some embodiments, ILD layers107 comprise low-k materials having a relative permittivity below thatof SiO2 (e.g., k≤3.9). ILD layer(s) 107 may comprise any of the abovematerials or a silicate glass, such as, but not limited to,fluorosilicate glass (FSG), phosphosilicate glass (PSG),borophosphosilicate glass (BSG) or undoped silicate glass (USG),organosilicate glass (OSG—e.g., carbon-doped oxide, CDO) porous OSG, andporous silicon dioxide. In some embodiments, one or more of ILD layers107 may comprise low-k organic polymeric materials such as polyimides,hydrogen silsesquioxane and methyl silsesquioxane. The above dielectricmaterials may be formed by spin coating methods (e.g., spin-on glass,SOG), chemical vapor deposition (CVD) or sol gel techniques.

In some embodiments, host chip device layer 104 comprises activedevices, passive devices or a combination of active and passive devices.Active devices may include arrays of field-effect (FET) or bipolarjunction transistors arranged in logic circuits. Feature pitches,defined as distances between like interconnect terminals over gate,source or drain regions of individual transistors may range between 40and 1000 nanometers (nm). For example, gate-to-gate pitches may bebetween 40-80 nm. A first metallization level M1 of the BEOL stackcomprises interconnect features 108 coupled to gate, source and drainterminals. Interconnect features 108 have a pitch P1 that may range, forexample, between 40 to 1000 nm. BEOL M1 interconnect features 108 arecoupled to a higher conductive level M2 through interlayer vias 109 invia level V1. In the illustrated embodiment, four BEOL conductive layers106, designated as metallization levels M1-M4, are shown below chipletdie 101, but chiplet die 101 may be attached at any suitable levelwithin BEOL metallization stack 103.

Layer thicknesses for both conductive layers 106 and dielectric layers107 may range from 50 nm in the lower levels proximal to substrate 105,to 5 microns, or more, in the upper levels near the top of the BEOLmetallization levels 103. Features within the conductive layers 106 maybe pads and traces (e.g., pads 111) that interconnect pads within aconductive level 106. Interlevel vias, similar to interlayer vias 109may extend through dielectric layers 107 between higher conductivelevels 106 and interconnect pads in adjacent levels 106. Interlevel vialevels are indicated as V1, V2, etc., in the figure and are coincidentwith ILD layers 107 In some embodiments, minimum feature size and pitchincreases with increasing distance from device layer 104. Upper-mostmetallization levels (e.g., levels highest in the stack) may have thelargest pitches, indicated by pitch P2 (greater than P1). In theillustrated embodiment, interlayer vias 110 have a pitch P2,interconnecting upper-most conducive level M4, comprising pads 111 toadjacent lower level M3.

Chiplet 101 comprises device layer 112 over the front side of chipletsemiconductor base 113. In some embodiments, chiplet semiconductordevice layer 112 and base 113 comprises a semiconductor material suchas, but not limited to, silicon (Si), germanium (Ge), silicon germanium(SiGe), gallium arsenide (GaAs), gallium phosphide (GaP), galliumnitride (GaN), gallium indium nitride (GaInN), or indium phosphide(InP). In some embodiments, chiplet base 113 has a thickness of lessthan 10 microns. In some embodiments, chiplet base 113 comprises a BOX.

Device layer 112 may comprise transistors and passive devices.Metallization within device layer 112 comprise transistor gate, sourceand drain terminals directly on the semiconductor devices. Device layermetallization may also comprise passive device terminals. Vias mayextend from terminal metallization on through a first ILD (not shown) tometallization features (e.g., pads and traces) in metallization levelM′1, the first metallization level of chiplet metallization stack 114.In some embodiments, device layer 112 has a thickness of 500 nm or less,and may comprise the parent semiconductor materials comprised by chipletbase 113. In some embodiments, device layer 112 comprisesheterostructure transistors comprising materials that are different fromthe parent semiconductor material of chiplet base 113.

Chiplet metallization stack 114 is over device layer 112, and may havean architecture similar to the architecture of BEOL metallization stack103 on host die 102. Features within metallization level M′1 areconnected higher metallization levels within stack 114 (e.g., M′2, M′3,etc.) by interlevel vias (not shown). The orientation of chiplet 101shown in FIG. 1A has the front side of chiplet 101 facing downward, withdevice layer 112 and chiplet metallization stack 114 adjacent to BEOLmetallization stack 103.

Metallization level stack 114 comprises conductive layers 115 adjacentto dielectric layers 116. Metal level M′1 is the lowest level ofmetallization adjacent to device layer 112. M′4 is the upper-most levelof metallization in chiplet metallization stack 114 as illustrated.Chiplet metallization stack 114 may comprise any number of metallizationlevels.

In some embodiments, the material compositions of the conductive layers115 and dielectric layers 116 are substantially the same as describedabove for BEOL metallization levels 103. For example, thicknesses oflayers 115 and 116 may range from 10-100 nm for the lower-most levels(e.g., level M′1), up to 8 microns in the highest levels. Size and pitchof features may increase from level to level, from a minimum of 10-100nm pitch for transistor interconnects within level M′1 (not shown) to 10micron pitch (e.g., pitch P2) for frontside pads 117 in level M′4.

In the illustrated embodiment, chiplet 101 is inverted so that chipletmetallization stack 113 on the front-side of chiplet 101 is betweendevice layer 112 and BEOL metallization 103 on host die 102. Level M′4of chiplet metallization stack 114 comprises features, such as frontsidepads 117, having a feature pitch P2 for alignment to pads 111 inmetallization level M4 of BEOL metallization stack 103.

In some embodiments, chiplet metallization stack 114 is hybrid-bonded toBEOL metallization stack 103. Consequently, host chip pads 111 andchiplet frontside pads 117 are fused together by diffusion bonds. Someoffset of host chip pads 111 relative to chiplet frontside interconnectpads 117 is shown in the figure to indicate small misalignment may bepresent in the structure due to chiplet positioning inaccuracies, asdescribed below. Larger feature size pitches in the upper-most level ofchiplet metallization stack 114 may enable large offset tolerances forchiplet attachment.

Diffusion bonds may be characterized by metallic interdiffusion of metalatoms between adjacent pads. Similarly, adjacent dielectric layers 107of BEOL metallization stack 103 and dielectric layer 116 of chipletmetallization stack 114 are fused, for example by formation of covalentbonds (e.g., Si—O—Si bonds) between dielectric layers 107 and 116.

In some embodiments, chiplet 101 comprises back side metallization. Inthe illustrated embodiment, backside metallization is between devicelayer 112 and M5 of BEOL stack 103. Chiplet backside metallizationcomprises backside interconnect pads 118 on a single dielectric layer119. In some embodiments, backside dielectric layer 119 comprises thesame or similar materials comprised by dielectric layers 116. Interlevelvias 120 extend from interconnect pads 118 though backside dielectric119, through semiconductor base 113, and terminating in device layer112. Chiplet backside vias 120 may interconnect one or more backsidepads 118 to transistor terminals in device layer 112, for example.Backside pads 118 may couple to I/O data signal and power routing inhigher metallization levels of BEOL stack 103 the interlevel vias 126.The minimum feature pitch P3 (e.g., pitch of vias 120) may correspond topower and ground rail pitches over device layer 112. Diameters ofchiplet backside vias 120 may range from 50 nm to 2000 nm.

One or more through-device layer vias (TDVs) 121 extend through devicelayer 112, connecting backside interconnect pads 118 to chipletmetallization stack 114 at one or more levels. Within BEOL stack 103,TDVs 121 interconnect front side metallization to higher BEOLmetallization levels through interlevel vias 126. Multiple TDVs 121 mayhave regular or irregular feature pitches. Smaller diameters of TDVs 121are enabled by smaller thicknesses (e.g., 2000 nm or less) of chip base113. In some embodiments, TDVs 121 have CDs (critical dimensions, e.g.,diameters) ranging from 50 nm to over 1000 nm. TDVs 121 having diametersunder 100 nm may have minimal impact on device layer density. TDVs 121having diameters under 200 nm may be positioned between individualtransistors, or confined to zones between backs of transistors. TDVfootprint may include a keep-out zone (not shown) surrounding individualTDVs. The keep-out zone is a region adjacent to the individual vias thatexcludes any structures such as metallization or devices.

Signals and/or power may be routed from a package substrate orinterposer (not shown) through first-level interconnects (FLIs) 130.Circuitry in device layer 104 that is below chiplet 101 may receive orsend signals that are passed through chiplet device layer 112 andthrough chiplet metallization stack 114. TDVs 121 may therefore improvethe electrical transparency of chiplet 101 by routing control signals(e.g., I/O data) and/or power from higher BEOL metallization levels tocircuitry on host chip 102 through chiplet 101. Circuitry within devicelayer 104 directly below chiplet 101 may therefore benefit from higherpower and/or signal density. Compared to routing signals and poweraround chiplet 101, the shorter signal paths through chiplet 101 mayminimize parasitic losses.

In some embodiments, composite chip 100 comprises fill dielectric layer122 over BEOL metallization stack 103. Fill dielectric layer 122 mayfully surround chiplet sidewalls 123, embedding chiplet 101 withindielectric material. Fill dielectric 122 may stabilize and strengthenthe composite die structure 100, and/or provide a platform for higherBEOL metallization layers (e.g., see FIGS. 2A-B). In some embodiments,fill dielectric layer 122 comprises an inorganic dielectric material,such as, but not limited to, amorphous and polycrystalline siliconoxides, in some cases having a higher k than ILD materials. In someother embodiments, fill dielectric layer 122 comprises an organicmaterial, such as, but not limited to, epoxy resins and epoxy resincomposites. Vias 124 extend through fill dielectric layer 122. Vias 124may interconnect upper BEOL metallization levels or embedded devices tolevel M4 and lower metallization levels. Vias 124 may route power and/orsignals to device layer 104.

FIG. 1B illustrates a cross-sectional view in the x-z plane of compositedie structure 150, according to some embodiments of the disclosure.

Composite die structure 150 comprises dielectric overlayer 125 overchiplet 101 and fill dielectric 122. Dielectric overlayer 125 may has athickness ranging between several tens of nanometers to 5 microns, andmay comprise dielectric materials employed in fill dielectric 122. Insome embodiments, dielectric overlayer 125 comprises dielectricmaterials such as, but not limited to, polycrystalline silicon oxides,silicon nitrides, silicon oxynitrides, silicon carbide and siliconcarbide nitrides. In some embodiments, second dielectric layer comprisesamorphous silica-based materials (e.g., spin-on glasses). In some otherembodiments, dielectric overlayer 125 comprises organic materials, suchas, but not limited to, epoxy resins and epoxy resin composites.Dielectric overlayer 125 may have a thickness in the same range as ILDs107

Through-vias 124 may extend through dielectric overlayer 125,terminating at BEOL M5. A via level V5 extends through dielectricoverlayer 125. In some embodiments, vias 127 comprise metals such as,but not limited to, copper, nickel, cobalt, tungsten, titanium, titaniumnitride, tantalum, tantalum nitride, and platinum. Chiplet backside pads118 may be interconnected to higher BEOL metallization levels by vias127. Diffusion barrier materials in vias 127 may protect chiplet 101from contamination by metal interdiffusion into backside pads 118.

FIG. 2A illustrates a cross-sectional view in the x-z plane of compositedie structure 200, according to some embodiments of the disclosure.

Composite die structure 200 comprises lower chiplet 101 a embedded infill dielectric 122. Lower chiplet 101 a is oriented such that backsideinterconnects comprising backside pads 118 are below device layer 112 inthe figure, and interfaced with BEOL metallization stack 103 (e.g.,reverse of the orientation shown in FIGS. 1A-1B). Chiplet metallizationstack 114 on the frontside of chiplet 101 is oriented upwards in thefigure to interface with BEOL metallization features 201, which may be amultiple traces or multiple pads in BEOL metallization level M5.Dielectric overlayer 125 covers lower fill dielectric 122 a and chiplet101, intervening between front side interconnect pads 117 in top chipletmetallization level M′4 and BEOL stack metallization features 201 in M5.Vias 127 extend through dielectric layer 125, connecting chipletfrontside pads 117 to metal features 201 in M5 and to highermetallization levels in BEOL stack 103.

In the illustrated embodiment, composite die structure 200 comprisesupper chiplet 101 b attached to pads 202 at level M5. In the illustratedembodiment, chiplet 101 b is shown to be substantially identical tolower chiplet 101 a. However, upper chiplet 101 b may have any otherarchitecture. In some embodiments, upper chiplet 101 b is staggered withrespect to lower chiplet 101 a. In the illustrated embodiment, upperchiplet 101 b is inverted with respect to lower chiplet 101 a, however,the relative orientations of chiplets 101 a and 101 b may vary. In someembodiments, frontside interconnect pads 117 are diffusion bonded topads 202 in M5.

In some embodiments, upper chiplet 101 b is embedded in upper filldielectric layer 122 b. Upper fill dielectric 122 b may have a thicknessthat is at least equal to the z-height of upper chiplet 101 b. Upperfill dielectric 122 b enables higher levels within BEOL stack 103,starting at level M6 above upper chiplet 101 b. In the illustratedembodiment, level M6 comprises interconnect pads 203 to which chipletbackside pads 118 are coupled by vias 204. Vias 124 similarly extendthrough lower dielectric layer 122 a to pads 202 in BEOL metallizationlayer M5, interconnecting upper chiplet 101 b to BEOL metallizationlevel M4. Above upper chiplet 101 b, BEOL metallization stack 103comprises more levels of metallization above level M6 terminating at topmetallization level Mx, comprising FLIs 130.

FIG. 2B illustrates a cross-sectional view in the x-z plane of compositechip 250, according to some embodiments of the disclosure.

Composite chip structure 250 has substantially the same architecture ofcomposite die structure 200 (FIG. 2A), but vias 124 are replaced by apassive interconnect chiplet 205. In the illustrated embodiment, passiveinterconnect chiplet 205 is embedded in lower fill dielectric layer 122a adjacent to chiplet 101 a. Passive interconnect chiplet 205 is apassive structure, such as an interposer, and may lack an active devicelayer as included in chiplet dies 101 a and 101 b. Passive interconnectchiplet 205 comprises metallization stack 206 including metal layers 207interleaved with dielectric layers 208. Layers 207 and 208 may comprisethe same materials described above for chiplet metallization stack 114,for example. Passive interconnect chiplet 205 may accommodate finerfeature pitches than possible with vias 124 (FIG. 2A). In theillustrated embodiment, passive interconnect chiplet 205 interconnectsupper chiplet 101 b to M4 within in BEOL stack 103. Vias 209 couplemetallization stack 206 to pads 202 in BEOL level M5. In someembodiments, metallization stack 206 comprises pads 210 that may bedirectly bonded to BEOL level M4.

FIGS. 3A and 3B illustrate an exemplary process flow chart 300,summarizing a method for fabrication of chiplet 101, shown in detail inFIGS. 4A-4G, according to some embodiments of the disclosure.

At operation 301 of process flow 300 in FIG. 3A, an in-process chipletwafer is received for metallization after completion of the fabricationof a device layer. An example of a partially fabricated chiplet wafer isshown in FIG. 4A. Chiplet wafer 400 is shown in a cross-sectional view,illustrating a completed device layer 112 over substrate 113 comprisinga suitable semiconductor material, such as, but not limited to, silicon,silicon germanium, germanium, gallium arsenide, gallium indium arsenideor gallium nitride. In some embodiments, substrate 113 is a SOI wafer,having a BOX layer below device layer 112. The device layer (e.g.,device layer 112) is formed on the wafer front side (e.g., during frontend of line processing), and may comprise high-density integrated MOSFETtransistors arranged in various n-MOS, p-MOS, CMOS or other classes ofdigital logic circuitry, as well as analog circuitry. In someembodiments, the device layer may comprise passive device such asresistors, capacitors, diodes and inductors. Local metallization withindevice layer 112 may be laid down to form transistor terminals andinterconnect vias. Transistor terminals may have feature pitches thatmay range between 10-500 nm, and may be as small as 1-10 nm, forexample. In some embodiments, a buried metallization layer is formedbelow gate, source and drain regions for backside contact.

Advancing to operation 302 in FIG. 3A, a process for forming a chipletmetallization stack (e.g., chiplet metallization stack 114) over thefront side of the device layer may be initiated at this stage. A firstinterlayer dielectric is formed over the device layer, depicted in FIG.4A as ILD layer 116. In the illustrated example, ILD layer 116 islabeled ILD1, covering device layer 112 comprising first-level metalfeatures such as gate terminals, traces and contact pads (not shown).Alternatively, wafer 400 (FIG. 4A) may be received already having ILDlayer 116 formed in an earlier operation. In some embodiments, ILD1 (andsubsequent ILD layers) comprises inorganic crystalline dielectricmaterials such as, but not limited to, silicon oxides, silicon nitrides,silicon oxynitrides, silicon carbides, silicon carbide nitrides, siliconoxycarbides, aluminum oxides and aluminum nitrides. In some embodiments,ILD1 (and subsequent ILD layers) comprises amorphous silicate materialssuch as, but not limited to, undoped silicate glass (USG) andfluorosilicate glass (FSG), deposited by CVD techniques or as a spin-onglass (SOG). In some embodiments, ILD2 (and subsequent ILD layers)comprises organic dielectrics such as, but not limited to, epoxy resins,polyimides, polynorborenes, benzocyclobutene, poly tetrafluoroethylene(PTFE), hydrogen silsesquioxane and methyl silsesquioxane. ILD layer 116may be deposited to a thickness of 1000 nm or less (e.g., 200-500 nm) tosupport formation of high-density interconnects to transistors in devicelayer 112.

Advancing to operation 303 in FIG. 3A, a plurality of via openings(holes) and trenches are formed in ILD1 layer and through the devicelayer, extending a distance into the semiconductor substrate on thebackside of the device layer. Referring again to FIG. 4A, via openings401 are depicted as high-aspect ratio apertures, generally submicronCDs, extending through device layer 112 a distance of up to severalhundred nanometers into the unprocessed semiconductor material insubstrate 113 on the backside (e.g., below) the device layer. Viaopenings may have a pitch P4 that may substantially correspond totransistor gate pitches (e.g., 40-1000 nm). For such small CDs andpitches, electron beam writing lithography or extreme ultravioletlithography for example, may be employed to define an etch mask, whichmay be metal or silicon nitride mask. In some embodiments, via openings401 extend to a buried oxide (BOX) layer, which may be employed as anetch stop. Via openings 401 may be formed by a high aspect ratioanisotropic etch process, such as a deep reactive ionic etch (DRIE,e.g., a nanometer-scale Bosch process) through alithographically-defined etch mask having a hole pattern correspondingto via positions. The etch process may produce substantially straightsidewalls in via openings 40, or may be optimized to produce taperedsidewalls if desired, having a cd (e.g., diameters) ranging from 50 nmto 1000 nm and a depth d1 of up to several hundred nanometers. As anexample, via holes may be formed by a modified Bosch process throughoxides and silicon having an average diameter of 100 nm and an aspectratio of at least 20-25, having a depth of up to approximately 2000 nm.

The particular numbers and distribution of TDV via openings 401 may bedetermined by locations and extents of device-free regions, generallycomprising an isolation dielectric. As TDVs penetrate through devicelayer 112, they need to be clear of device keep-out zones, and thereforenot be in any particular registration with the transistors or otherdevices. However, to minimize the impact on transistor density in ahigh-density device layer 112, the TDV CD may be at a submicron scale topermit a large number of TDVs to traverse device layer 112 withoutsignificant disruption of transistor packing that may require reductionin their number in a given area. Integrated circuitry layouts withindevice layer 112 may be organized to provide extensive device-freeregions for formation of TDVs. In some embodiments, via openings 401 maybe made between individual transistors, or in field regions betweenarrays or blocks of transistors. Field regions generally comprise anisolation dielectric surrounding active semiconductor regions to isolatecircuits or individual devices. In lower density device layers, largerTDVs (e.g., CDs of several microns) may be formed in larger fieldregions with minimal or no impact on device layer density.

In the example illustrated in FIG. 4A, shallow trenches 402 for in-planemetallization features such as pads and traces that constitutemetallization level M′1 may be formed by a second dielectric etch ofILD1 (116), after deep etching of via openings 401. A secondlithographically-defined dry etch mask (e.g., a hard photoresist) may bealigned to via openings 401, and trenches etched by a dry etch (e.g.,Bosch) process may be employed to form trenches 402 to a depth d2 of10-50 nm. The thickness of trenches 402 may be substantially less thanthe thickness of ILD1.

Advancing to operation 304 of process flow 300 in FIG. 3A, metal isdeposited into etched via openings and trenches by two successiveiterations of a single Damascene process or a dual Damascene process. Ina first single Damascene iteration, either vias or trenches are formed,then filled by a first metal deposition and planarized to remove theoverburden (e.g., overfill) and cause the metallization to be planarwith the dielectric surface. The first Damascene process is followed bya second Damascene process, where trenches are formed if vias wereformed first, or vice-versa. The second etched features are filled bysecond metal deposition, then planarized a second time to remove anyoverburden and level the formed metal features with the dielectricsurface. Thus, the metal features are sunken below the level the ILD,enabling a low z-height of the multi-level stack.

In a dual Damascene process, via holes and trace and/or pad trenches areformed before metallization. A single metal deposition is employed,filling both via holes and trenches simultaneously. Metal deposition isfollowed by a planarization operation to remove overburden, formingthrough-device layer vias and in-plane metallization features in ILD1.

Metal deposition may be performed by electroplating of metals such ascopper, gold or nickel into the etched features. Precedingelectroplating, first a barrier layer followed by an electroplating seedlayer are deposited as thin films into the etched features. A barrierlayer may comprise a conformal titanium or titanium nitride film indirect contact with the dielectric, to prevent diffusion andcontamination by atoms of metallization metal. The barrier layer may be1 to 5 nm thick. The seed layer may comprise the same metal as thatbeing plated, such as copper. Barrier and seed layers may be depositedby any suitable physical deposition technique, such as RF and/or DCsputtering, or by vacuum evaporation of metals. While electroplating isa suitable deposition process for noble metals such as copper and gold,as well as nickel, via openings 401 and in-plane trenches 402 mayalternatively be filled by a chemical vapor deposition process ofaluminum and refractory metals such as tungsten, tantalum and titanium.In some embodiments, metal structures may be formed by electrolessdeposition.

In FIG. 4B, first level metallization features resulting from theabove-described operations are shown as TDVs 121 extending orthogonallyfrom sunken in-plane features 115 in M′1, through device layer 112 and adistance d3 into substrate 113 on the backside of device layer 112. TDVs121 formed by filling via openings 401 are initial growth segments ofTDVs 121 extending from device layer backside to device layer frontside. ILD1 is coincident with first via level V′1, the segment of TDVsextending between device layer 112 and M′1 on device layer front side.In the illustrated example, some TDVs 121 are landed, extending onlythrough via level V′1 and terminating on metallization feature 115 inlevel M′1. Other TDVs 121 are unlanded, having no anchoringmetallization feature in M′1. As will be shown, these TDVs will beextended further into the growing metallization stack in subsequentoperations to land on features at higher metallization levels.

Advancing to operation 305 in FIG. 3A, the next (e.g., second) ILD layeris formed over metallization level M′ 1. The second ILD layer may besubstantially identical to the first ILD. In some embodiments, thethickness of the second ILD layer (ILD2) may be greater than the firstILD thickness, as metallization feature sizes and pitch mayincrementally increase at each higher metallization level. Thus,metallization feature size and pitch in level M′2, to be formed overILD2 may be greater than corresponding values in level M′ 1.

At operation 306 in FIG. 3A, a plurality via openings are formed in thesecond ILD layer in via layer V′2 in ILD2 by a dry etch process. The dryetch process may be substantially the same as that used to form V′1(e.g., a nanometer-scale Bosch process with the same etch parameters).The V′2 via openings are aligned over the unlanded TDVs formed in V′1and M′1 in the previous metallization operations described above. TheV′2 via openings may have substantially the same diameters of the firstV′1 TDVs. In a second etch, and be formed by the same process employedfor formation of the first segments.

Similarly, in-plane metallization feature trenches similar to trenches402 in ILD1, are formed in a separate etch process. For example viaopenings similar to via openings 401 may be formed in a first etch, andin-plane trenches may be formed in a subsequent second etch. The reverseorder of etching the features may be an equally valid process choice.After formation of via holes and trenches, formation of V′2 TDVs and M′2metallization features may proceed by substantially the same operationsas described above. As the metallization stack is built up,substantially the same operations may be employed for formation of eachILD and metallization level.

The recirculating arrow in FIG. 3A indicates a repetition of operations305-306 that may be employed for creation of successive metallizationlevels during build-up of the metallization stack. An example of acompleted stack is shown in FIG. 4C, showing three metallization levels115 (M′1 to M′3) separated by an ILD layer 116. In the illustratedembodiment, each metallization layer comprises the same materials and isfabricated in substantially identical manner according to the repetitiveoperations 304-306 in process flow 300 in FIG. 3A. In alternativeembodiments, a different etch and deposition methods may be employed atdifferent levels within the stack. In general, the layer thickness mayincrementally increase as the number of stack levels increase. Thenumber of levels in the chiplet metallization stack may depend onminimum feature pitch required to substantially match the minimumfeatures pitch in the chiplet interface layer of the BEOL metallizationstack of the host chip (e.g., pitch P2 in FIG. 1A). For relatively largeinterconnect sizes and pitches that may be present at a specific BEOLlayer in the host chip metallization stack (e.g., BEOL metallizationstack 103) at which the chiplet is attached, more metallization levelsmay be required to expand the fine feature CD's and pitch proximal tothe device layer of the chiplet (e.g., device layer 112), for example toexpand from pitch P3 of device layer 112 to P2 at the chiplet-host waferinterface (see FIG. 1A).

In the example structure shown in FIG. 4C, TDVs 121 are landed atmetallization features 115 in different metallization levels M′1-M′3 inchiplet metallization stack 114. In alternative embodiments, multipleTDVs 121 may land on features such as traces and pads in the samemetallization level. The TDVs 121 shown are each landed at differentmetallization levels to show that front side metal features 115 in eachlevel may be have access to backside metallization through thethrough-device layer interconnections provided by TDVs 121.

In preparation for a further processing operations, a carrier substrate404 may be attached to the topmost level of chiplet metallization stack114 Carrier 404 may provide mechanical support as further processing mayrender chiplet wafer 400 more fragile.

Advancing to operation 307 in FIG. 3B, the backside of the chiplet waferis thinned to reveal the bottoms of the TDVs on the backside of thedevice layer. The TDV bottoms may be the tops of the TDVs on thebackside of the chiplets, and may be further extended by backsidemetallization. The chiplet wafer may be attached to a carrier wafer formechanical support of the thinned wafer, which may have an overallthickness of 10 microns or less.

FIG. 4D shows a cross-sectional view of chiplet wafer 400 (now inverted)after thinning bulk material 113 from the backside to a thickness d5 ofa few microns (e.g., 1-2 microns) down to submicron thicknesses, forexample, from an original thickness of 200-700 microns. Substrate 113may not be shown to scale relative to device layer 112 (thicknessranging between 100 to 1000 nm) and ILDs 116. Thinning of substrate 113to small thicknesses under a few microns (e.g., 1 or 2 microns,excluding device layer thickness) may be necessary to support submicronCD TDVs 121, as dry etch (e.g., nanometer-scale Bosch processes) aspectratios for submicron CD trenches and holes are currently limited to atleast 10 to 15. A maximal substrate thickness of 1000 to 1500 nm (e.g.,1.0 to 1.5 micron) may support backside vias and TDVs having a 100 nmdiameter. Depending on the thickness of device layer 112 and CD of TDVs121, substrate 113 may be thinned to virtually zero thickness,completely removing any inactive material of substrate 113, leaving onlydevice layer 112 to support TDVs 121. Device layer 112 may havethicknesses ranging between 100-1000 nm.

Thinning operations include, but are not limited to, chemical-mechanicalplanarization (CMP) on the wafer backside, removing bulk semiconductormaterial by abrasive grinding and chemical dissolution and polishing.The wafer thickness may be reduced to reveal bottoms of TDVs 121 belowdevice layer 112 (e.g., on the backside), and may be substantially equalto depth d4 (e.g., 1-2 microns) of TDVs 121 below device layer 112.

Advancing to operation 308 in FIG. 3B, an ILD is formed over thebackside of the device layer and via holes are patterned within thebackside ILD. The backside ILD may be formed by substantially the samematerials and methods employed for the formation of the ILD layers inthe front side metallization stack. The backside ILD layer may cover thethin (e.g., 1-2 micron) substrate layer 113 over device layer 112, ordirectly exposed device layer 112 if substrate 113 is completelyremoved, as well as revealed bottoms of the TDVs. In the latter case, abackside ILD may passivate and protect exposed devices and device-layermetallization, as well as insulate the device layer from backsidemetallization features such as backside vias and pads forinterconnection of chiplet backside to the BEOL metallization stack(e.g., BEOL stack 103).

An example structure is shown in FIG. 4E. Backside ILD 119 is shown tobe formed over thinned substrate 113, but may alternatively be in directcontact with device layer 112, as noted above. ILD 119 may comprisesubstantially the same materials as front-side ILDs 116 and may beformed by the same process (e.g., RF sputtering, atomic layerdeposition, CVD), and may have a thickness of under 500 nm. Backside viaholes 405 have been formed through ILD 119 and substrate 113 (ifpresent), extending to the backside of device layer 112. Backside viaholes 405 may be aligned over buried transistor terminal metallization,formed on the backside of device layer 112, for example, underneath thesource and drain regions below n-wells and p-wells in a CMOSarchitecture during fabrication of device layer 112 in previousoperations. Buried transistor terminals formed below source/drainregions or gates may act as etch stops for via holes 405.

TDV via holes 406 extend through ILD 119 to terminate on bottoms of TDVs121, which may serve as etch stops. In some embodiments, a second etchoperation is performed over ILD 119 to fabricate trenches 407 for viapads. Via pad trenches 407 need not be formed at this stage if, forexample, via pad trenches 407 are to be formed for a second Damasceneprocess after deposition of vias is complete.

Advancing to operation 309 in FIG. 3B, backside vias openings and padtrenches are filled in a metal deposition, creating backside vias andinterconnect pads. An illustrated example of the resulting structure isshown in FIG. 4F. Backside vias 120 and TDVs 121 extend through backsideILD 119, forming via level V4. Backside contact pads 118 may be grownover the tops of backside vias 120 and TDVs 121 in a dual Damasceneprocess or a second single Damascene process. The backside contact pads118 are to interface to contact pads in a host chip BEOL metallizationlevel (e.g. level M5 in FIG. 1A) formed after chiplet attach, as shownin FIG. 1A, or to interface at the BEOL metal level of chiplet attach(e.g., M4 in FIG. 2A).

FIG. 5 illustrates a process flow chart 500 summarizing a chiplet dieattach process shown in detail in FIGS. 6A-6F for fabrication ofcomposite die structure 100, according to some embodiments of thedisclosure.

At operation 501, singulated chiplets are received into a back-end ofthe line (BEOL) metallization process of a host chip wafer (e.g., hostdie wafer 102 in FIG. 1A). The singulated chips may be formed asdescribed for FIG. 4G (e.g., chiplets 101). In some embodiments,singulated chiplet dies may be attached on a handle wafer (e.g., carrierwafer 404) for mechanical support.

At operation 502, individual chiplet dies are attached and bonded to thehost die wafer after partial completion of a BEOL metallization layer(e.g., BEOL metallization stack 103 on host die wafer 102, FIG. 1A). Asuitable attachment process may comprise a pick-and-place operation.Individual chiplets may be placed, or multiple chiplet dies up toseveral hundred at one time may be simultaneously placed over apartially complete BEOL metallization stack on the host wafer.Metallization may be completed include several metal levels, for exampleup to M4 as shown in FIG. 1A.

The wafer-level chiplet attach process may comprise a hybrid bondingprocess to the top-most metallization level of the host die that iscompleted before chiplet attachment, where metal contacts on the highesthost die metallization level completed, and top-level interconnects onthe chiplet metallization stack are joined by metal diffusion bonding,and top-level dielectric layers from the chiplet stack and the host diestack are atomically bonded together. Adhesion strength may be increasedby addition of interfacial layers. Multiple chiplet dies may be attachedto a single host die at wafer level, and at more than one level in theBEOL stack on the host die.

At operation 503, a fill dielectric (e.g., fill dielectric 122) isdeposited at wafer level over the bonded chiplet and the open portionsof the partial metallization stack (e.g., BEOL stack 103 in FIG. 1A) ofthe host die wafer. The fill dielectric may be spin-on glass or anorganic polymeric resin, such as an epoxy resin. The fill dielectric maystabilize the bonded chiplet on the host wafer by potting the chiplet,increasing adhesion to the host die. Subsequently, the fill dielectricmay be planarized to the top surface of the bonded chiplet, exposingbackside contacts on the chiplet. The planarized fill dielectric mayprovide a substrate for continuation of metallization stack build-up andthe next BEOL metallization level above the chiplet.

At operation 504, through-via openings (e.g., through-vias 124, FIG. 1A)are formed in the fill dielectric adjacent to a sidewall of the bondedchiplet. The through-via openings may be formed as high-aspect ratioapertures extending several microns from top to bottom of the filldielectric. The via openings may have larger diameters relative to viasin the interlayer dielectric levels in the BEOL metallization stack. Theintended through-vias adjacent to the chiplet may shunt vertical powerand/or I/O data signal routing adjacent to the chiplet.

At operation 505 the through vias are formed by filling through-viaopenings during a BEOL metallization process. The formation ofthrough-vias may be accompanied by formation of the next metallizationlevel (e.g., level M5 in FIG. 2A) in the BEOL stack (e.g., BEOL stack103).

At operation 506, the next BEOL stack metallization level may be formedby overgrowth of through vias in operation 505, or by simultaneousgrowth of a metal layer over the fill dielectric top surface. Featuresmay be formed by metal etching through a lithographic mask or by metalCVD.

At operation 507, build-up of the BEOL stack over the host chip wafer iscontinued by repetition of operation 505 to create additionalmetallization levels and addition of a ILD layer between metallizationlevels.

FIGS. 6A-6F illustrate a method of manufacture of composite diestructure 100, according to some embodiments of the disclosure.

At the operation illustrated in FIG. 6A, chiplet wafer 400 comprisesdevice layer 112 that has been formed on semiconductor base 113 inprevious operation. Device layer 112 may include arrays of MOSFETtransistors (e.g., fabricated in 50 nm to 100 nm CMOS processes). Layersof metallization have been formed over device layer 112 by a build-upprocess to form metallization stack 114, interleaving metal layers 115including, but not limited to, any of copper, aluminum, gold, silver,tungsten with dielectric layers 116 comprising dielectric materialsincluding, but not limited to, silicon oxides, silicon nitrides, siliconoxynitrides, silicon carbide or silicon oxycarbides. Metal layers may beformed by any of sputtering, evaporation, chemical vapor deposition,electroplating or electroless plating processes. Dielectric layers maybe formed by sputtering (e.g., RF sputtering of dielectric targets),chemical vapor deposition or spin-coating techniques (e.g., spin-onglass). Layer thicknesses may range between 50 nm to several microns.Formation of metallization stack 114 may be a back-end-of-line (BEOL)process in the chiplet fabrication line.

After metal layers are formed, chiplet wafer 400 is singulated, asindicated by the dashed vertical lines, to liberate individual chiplets101. In some embodiments, semiconductor base 113 is thinned by grindingoperation before singulation. Vias (e.g., through-device layer vias 121)may be formed after the thinning operation and before singulation.

In FIG. 6B, singulated chiplets 101 may be introduced into thefabrication line for host dies 102 during the BEOL metallization stage.In a wafer-level pick-and-place operation, individual chiplets may beattached to host die 102. The pick-and-place operation may have anaccuracy tolerance of several tens to hundreds of nanometers, andintroduce some alignment offset between chiplet metallization pads 117and BEOL metallization stack pads 111. In some embodiments, chiplet 101is hybrid-bonded to host die 102 at wafer level. Hybrid bonding may beperformed by pick and place operation followed by thermal anneal of theassembly comprising chiplet 101 and host die wafer 102. forms directmetal-to-metal bonds between pads 111 and 117, forming direct-bondinterconnects, and molecular bonds between dielectric layers betweenchiplet interlayer dielectric 116 and BEOL interlayer dielectric 107.

In FIG. 6C, BEOL metallization 103 build-up process is continued bydeposition of fill dielectric 122 over attached chiplet 101 and BEOLmetallization stack 103. Fill dielectric may comprise at least in partan amorphous silicate material that may be deposited by spin-coating aninorganic silica-based glass (e.g., spin-on glass, SOG). In alternateembodiments, fill dielectric 122 may be deposited by chemical vapordeposition processes such as plasma-enhanced chemical vapor deposition(PECVD) and low-pressure chemical vapor deposition (LPCVD).

Fill dielectric 122 may be deposited to z-height that is at least thez-height of attached chiplet 101. Depending on the z-height of chiplet101, one or more coatings of fill dielectric 122 may be applied. Chiplet101 may have a z-height that ranges between 10 and 20 microns. Excessfill dielectric material may form overlayer 402 that extends abovechiplet 101. Overlayer 402 has a thickness z that is the differencebetween z-heights of fill dielectric 122 and chiplet 101.

In FIG. 6D, a grind or polish operation (e.g., chemical-mechanicalplanarization, CMP) is performed to remove overlayer 402 and reveal pads118 at the tops of extension vias 120 and through-device layer vias 121of attached chiplet 101. The reveal process may prepare the stack for anew metallization level, where the top surface 402 of fill dielectricprovides a platform for the next stack layer. Pads 118 may be revealedto provide a surface to grow interconnecting vias through an additionaldielectric or for direct bond interconnection of a second chiplet orinterposer.

A CMP tool may be employed to remove the top portion of fill dielectric122 and grind down to reveal pads 118. The process may remove up toseveral microns of fill dielectric overlayer 402 to planarize filldielectric 122 with chiplet 101.

In FIG. 6E, through vias 124 are formed within a region of filldielectric layer 122 adjacent to chiplet 101. High-aspect ratio viaopenings (not shown) may be patterned in fill dielectric layer 122through a etch mask that may be a patterned photoresist layer or metalmask. Via openings may be formed by an etch process that may producehigh-aspect ratio apertures with substantially straight sidewalls, suchas deep reactive ion etch (DRIE) process (e.g., a Bosch process). Metalfeatures in BEOL level M4 may serve as an etch stop, such as trace 404.

Several suitable metal deposition processes may be employed to producethrough-vias 124 with the formed via openings. Copper, gold, silver,cobalt and nickel are metals suitable for electroplating. Electroplatingmay be employed to grow vias 124 from the bottom of the via openings atmetallization level M4, where one or more features such as trace 304 maybe employed as a cathode. The etch mask employed to form via openingsmay also be employed as a plating mask. Alternatively, electrolessdeposition within via openings may be employed to produce through-vias124. A catalytic seed layer comprising palladium may be formed beforethe electroless deposition step employing a solution of the metal, suchas copper or gold.

In FIG. 6F, dielectric overlayer 125 is optionally deposited overchiplet 101 and fill dielectric 122 to extend chiplet backside pads 118and through-vias 124 producing composite die structure 150 shown in FIG.1A. Extension vias 127 may be formed through dielectric overlayer 125above backside pads 118 of chiplet 101 to enable interconnection withupper metallization levels (not shown). Similarly, through vias 124 maybe extended through overlayer 125. In operations similar to theformation of through vias 124 in fill dielectric 122 adjacent to chiplet101, via openings may be created over chiplet backside pads 118 andthrough-vias 124.

Alternatively, the planarization operation shown in FIG. 4D may beomitted, or limited to grinding fill dielectric 122 to produce a desiredoverlayer z-height over chiplet 101. Via openings may be formed overbackside pads 118 and in the region adjacent to chiplet 101 forformation of through vias 124. Metal may be deposited in via openings asdescribed above, forming through-vias 124 and extension vias 127. Othermetals such as, but not limited to cobalt and titanium, may be depositedover extension vias 127 to form diffusion barriers over backside pads118.

FIG. 7A illustrates a cross-sectional view in the x-z plane of acomposite die structure 700, according to some embodiments of thedisclosure.

Composite die structure 700 comprises chiplet 701 and passiveinterconnect chiplet 211 (e.g., an interposer) embedded within BEOLmetallization stack 103 on host die 102. In some embodiments, chiplet701 and passive interconnect chiplet 211 are hybrid bonded to BEOLmetallization level M4. A hybrid bond may be characterized as havingdiffusion bonds between pads 117 on the top metal level of chipletmetallization stack 114 and pads or lines 111 in BEOL metal level M4 ofhost die 102. Dielectric materials in opposing metallization stacks areatomically bonded at their interface. In some embodiments, dielectricmaterials in the opposing metallization stacks are substantially thesame as those in embodiments described above.

Chiplet 701 comprises multiple through-device layer vias (TDVs) 702extending from contact pads 703 on backside bulk semiconductor 113 tometallization levels in stack chiplet metallization stack 114. TDVs 702may have diameters greater than 1000 nm (e.g., 1 micron) to severalmicrons. In comparison to through-device layer vias 121 in chiplets 101,TDVs 702 may be substantially larger. Feature pitch P4 between TDVs 702may be significantly larger than pitch P3 between smaller through-devicelayer vias 121 and vias 120 in FIG. 1A to accommodate the relativelylarger diameter of TDVs 702. P4 may be measured in terms of microns. Thelarger TDVs may result in lower transistor density in device layer 112,however they may provide alternative advantages such as higher currentcarrying capability and lower resistance. They may also simplify theprevious fabrications steps of the chiplet 701. The larger size of TDVs702 relative to through-device layer vias 121 may also facilitate largeralignment tolerances for chiplet placement on host chip 102 inpick-and-place operations, which may have movement accuracy tolerancesof several microns. The center-to-center offset indicated in the figurebetween TDVs 702 and interconnect vias 703 in via layer V4 extendingthrough dielectric 125 shows an example of chiplet placementmisalignment relative mask alignment to markers and other features inmetallization level M5. Similar dimensions may be employed for vias 704over passive interconnect chiplet 211 to relax alignment tolerances. Asfor through-device layer vias 121, TDVs 702 may route power and I/O datasignals from upper BEOL metallization layers in BEOL stack 103 (e.g.,M5) to circuitry on host die 102 directly underlying chiplet 701,enabling more direct routing with reduction of parasitics, latencies andlosses relative to more circuitous routing architecture that would benecessary for an opaque chiplet.

FIG. 7B illustrates a cross-sectional view of composite die structure750 comprising alignment compensation vias 127, according to someembodiments of the disclosure.

In FIG. 7B, fill dielectric 122 has a z-height greater than thez-heights of chiplet 701 and passive interconnect chiplet 211. Tops ofthrough-device layer TDVs 702 of chiplet 701 are covered by filldielectric 122, and extended to the top of fill dielectric 122 bysmaller alignment compensation vias 127. Fill dielectric 122 may beplanarized to a distance z above chiplet 701. Alignment compensationvias 127 may be formed in the layer of fill dielectric 122 above chiplet701 within via level V4, and aligned to both TDVs 702 (with loosealignment tolerance) and with tighter alignment tolerance to features inmetallization level M5 above chiplet 701 and passive interconnectchiplet 211. Alignment compensation vias 127 in via level V4interconnect TDVs 702 to features 705 in M5. The dielectric architectureshown in FIG. 7B may eliminate the need of an ILD deposition operationin the fabrication process. Alignment compensation vias 127 may becenter-aligned to features 705 but off-center with respect to misalignedTDVs 702, enabling precision alignment of TDVs 702 to features 705formed subsequently in level M5.

Passive interconnect chiplet 211 may be similarly misaligned due toplacement accuracy limits. Alignment compensation vias 215 extendingthrough a layer of fill dielectric 122 above passive interconnectchiplet 211 may be precision-aligned to features 706 in level M5 andinterconnect misaligned features on the top layer of passiveinterconnect chiplet 211 (not shown) to features 706.

FIG. 7C illustrates a cross-sectional view of composite die 760 embeddedin a thick metallization layer, according to some embodiments of thedisclosure.

In the illustrated embodiment, ILD 107 level 4 (ILD4) within BEOLmetallization stack 103 comprises buried thick metallization features707 shown adjacent to chiplet 701, and have a z-height equal to orgreater than the z-height of chiplet 701. In some embodiments, thickmetallization features 707 are trench vias that extend in they-dimension above and below the plane of the figure. In someembodiments, thick metallization features are large-diameter powerdistribution interconnect vias. Chiplet 701 is shown embedded withinILD4 in the vicinity of thick metallization features 707, but may ha

As shown, chiplet 701 may be somewhat misaligned relative tometallization features in level M4 and lower levels in BEOLmetallization stack 103 due to imprecise placement on host die 102.However, in the illustrated embodiment TDVs 702 are aligned tometallization features 705 in M5. In the illustrated embodiment, TDVs702 have been formed subsequent to chiplet attachment, enabling precisealignment (within design tolerances) of TDVs 702 to metallizationfeatures 705 in M5.

FIG. 8A illustrates a cross-sectional view of composite die structure800, comprising cantilevered vias 801, according to some embodiments ofthe disclosure.

In composite die structure 800, cantilevered vias 801 are adjacent tosidewalls 123 of chiplet 101, extending across the z-height of chiplet101, from features 802 in M4 in BEOL metallization stack 103 tometallization features 803 in level M5 over chiplet 101. In thecross-sectional view, two cantilevered vias 801 are shown, having arectangular cross section in the x-z plane and extending in the ydimension (above and below the plane of the figure). In someembodiments, cantilevered vias 801 are high-aspect ratio structures,having a z-height several times the width in the x dimension.Cantilevered vias 801 may be employed to couple power from M5(ultimately from FLIs 130) to circuitry on host die 102, and may have alarge cross section in the x-y plane to provide a low-resistance path toaccommodate large current flow. The extent of cantilevered vias 801 inthe x dimension may be adjusted to maximize the cross-sectional area forlowest resistance. Any number from one to four of cantilevered vias 801may be adjacent to chiplet 101. The two cantilevered vias 801 shown inFIG. 8A extend along sidewalls 123 in the y dimension above and belowthe plane of the figure. In some embodiments, a third cantilever via anda fourth cantilever via (not shown) may extend along opposing sidewallsof chiplet 101 in the x dimension, orthogonal to cantilevered vias 801,as shown as cantilevered vias 804 in FIGS. 8B and 8C.

Cantilevered vias 801 may comprise suitable metals such as, but notlimited to, copper, aluminum, gold, nickel, cobalt, platinum, palladium,tungsten, titanium and tantalum. The latter valve metals may be employedin barrier layers. In some embodiments, the fill metal (e.g., copper orcopper-aluminum) may be annealed to improve conductivity.

Cantilevered vias 801 may interconnect metallization features belowchiplet 101 (e.g., metallization feature 802 in M4) to metallizationfeatures above chiplet 101 (e.g., metallization feature 803 in M5). Dueto the close proximity to chiplet 101, cantilevered vias 801 may enablelow-loss routing of large scale power to host die circuitry that isdirectly under chiplet 101. Cantilevered vias 801 may provide analternative to TDVs (e.g., TDVs 702 in FIG. 7A and 121 in FIG. 1A),having less impact on chiplet transistor density and providing a lowerresistance path for high power delivery.

FIG. 8B illustrates a plan view in the x-y plane of composite diestructure 800 having chiplet 101 symmetrically aligned with cantileveredvias 801 and 804, according to some embodiments of the disclosure.

In the plan view of FIG. 8B, taken along plane A-A′ in FIG. 8A,additional cantilevered vias 804 running orthogonal to cantilevered vias801 (shown in cross-section in FIG. 8A), but are substantially identicalto cantilevered vias 801 in other respects. In the illustratedembodiment, each of the four sidewalls 123 of chiplet 101 areimmediately adjacent to a cantilevered via (e.g., 801 and 804). Althoughnot shown, a barrier layer may be between cantilevered vias 801 and 804and sidewalls 123 to prevent diffusion of metals such as copper intochiplet dielectric materials (e.g., ILD 116 and fill dielectric 122) orsemiconductor (e.g., semiconductor material 113). Metallizationstructures 803, depicted as traces in the illustrated embodiment overfill dielectric 122, are connected to cantilevered vias 801 and 804.Metallization structures 805 may couple power to power rails (not shown)on chiplet 101. During operation, cantilevered vias 801 and 804 may becoupled to positive and negative power supply terminals, respectively,as indicated by the Vcc and Vss designations. In the arrangement shown,cantilevered vias 801 are coupled to a Vcc supply, while orthogonalcantilevered vias 804 are coupled to a Vss supply.

Cantilevered vias 801 and 804 may be self-aligned to chiplet 101. In theexample shown in the illustrated embodiment of FIG. 8B, chiplet 101 issubstantially symmetrically aligned with respect to cantilevered vias801 and 804. Widths w1 and w2 of cantilevered vias 801 and 804,respectively, are substantially equal.

FIG. 8C illustrates a plan view in the x-y plane of composite diestructure 800, having some misalignment of chiplet 101 with respect tocantilevered vias 801 and 804, according to some embodiments of thedisclosure.

The plan view of FIG. 8C is taken along plane A-A′ in FIG. 8A. Theplacement of chiplet 101 is misaligned with respect to cantilevered vias801 and 804, overlapping the cantilevered via sidewalls. The indicateddimensions show a first displacement δ of chiplet 101 to the left in thefigure in the x dimension, and a second displacement γ upward in the ydimension of the figure. Cantilevered vias 801 and 804 are self-alignedto chiplet 101, where the loss of width w2 by the amount γ in the uppercantilevered via 804 is compensated by the gain in width by the sameamount γ in the lower cantilevered via 804. Similarly for cantileveredvias 801, the loss of width w1 by an amount δ by the left-side (in thefigure) cantilevered via 801 is compensated by the gain in w1 by δ onthe right-side (in the figure) cantilevered via 801. In this manner, thetotal resistance of the via pairs (e.g., Vcc and Vss) remainsubstantially constant for different amounts of misalignment of chiplet101 within limits. The self-alignment capability of cantilevered vias801 and 804 may enable relaxed alignment tolerances of chiplet 101placement.

FIG. 9 illustrates process flow chart 900 summarizing an exemplarymethod for making composite die structure 800, according to someembodiments of the disclosure.

At operation 901, a host die wafer is received having a partiallycomplete BEOL metallization stack with one or more chiplet dies (e.g.,chiplets 101) placed and attached to the upper-most metallization levelof the stack in a previous operation for each host die on the host diewafer. The chiplet dies may be embedded in a fill dielectric (e.g., filldielectric 122) over the partially completed BEOL metallization stack.

At operation 902, a wafer-level process is employed to etch trenches inthe fill dielectric adjacent to one or more sidewalls of the chipletdies by an anisotropic etch process to form high-aspect ratio trenches.Trenches may be etched though rectangular hard etch mask openings thatoverlap or fully encompass the chiplet dies. Due to placementtolerances, chiplets may be slightly misaligned with respect to etchmask features. The fill dielectric may be etched completely through tothe top of the BEOL stack. The top of chiplets may comprise an etch stopmaterial so that only fill dielectric material surrounding the chipletswill be removed without damaging the chiplet.

At operation 903, a wafer level process is employed to fill the etchedtrenches with a suitable metal, such as copper or copper-aluminum alloy,to form cantilevered vias (e.g., cantilevered vias 801 and 804). Aconformal barrier layer may be formed over the trench sidewalls beforethe metal fill operation to prevent diffusion of metal atoms toadjoining structures in both chiplets and host dies. Cantilevered viasmay be grown to interconnect metallization structures on the frontsideof the chiplet (e.g., metallization features 803) to metallizationstructures on the backside of the chiplet (e.g., metallization features802). Cantilevered vias may be grown to interconnect features in lowerhost die BEOL metallization levels below the attached chiplet, withfeatures in upper host die BEOL metallization levels.

Trenches may be filled to overflow, where some metallization structuresinterconnected by the cantilevered vias may be formed by lateralovergrowth from the tops of the trench vias and patterned by metal etchsubsequently. Other features may be formed at the top of the filldielectric by a Damascene process as those described above, creating anew metallization level in the BEOL metallization stack.

At operation 904, a planarization process is employed to remove excessmetal from metallization features at the newly-formed top metallizationlevel and create a uniform z-height for all metallization structures inthe top level of the BEOL stack, including cantilevered vias.

At operation 905, build-up of the BEOL stack continues. Highermetallization levels bury the cantilevered vias within the BEOL stack.Larger metallization features, for example, power-routing structures inthe higher BEOL stack levels, may be coupled to the cantilevered viasthrough interlevel vias. The build-up process may be recursive fordeposition of dielectrics and metals employed in each succeeding level.In some embodiments, a second chiplet attach may be performed at ahigher metallization level. Cantilevered vias may be formed adjacent tothe second chiplets for power routing to host die circuitry below thesecond chiplets.

At operation 906, BEOL stack is completed, completing formation ofcomposite die structures (e.g., composite die structure 800). One ormore metallization layers may be formed over the attached chiplets andcantilever vias grown adjacent to the attached chiplets, burying themwithin the BEOL stack. First level interconnects (e.g., FLIs 130) areformed at the top level of the BEOL stack to enable mounting of thecomposite die structure to a package substrate or an interposer.

FIGS. 10A-E illustrate cross-sectional views in the x-z plane of anexemplary process for making a composite die structure 800 summarized inthe process flow 900, according to some embodiments of the disclosure.

FIG. 10A illustrates a cross-sectional view of host die 102 (receivedunsingulated from the wafer) comprising chiplet 810 bonded to M4 of BEOLmetallization stack 103 on host die 102. Chiplet 101 is embedded in filldielectric 122. While a single chiplet 810 is shown, multiple chipletsmay be attached to BEOL stack 103 on host die 102. The top metallizationlevel shown is M4, but chiplet 810 may be attached at any suitable levelwithin the BEOL stack. The operations described below may be repeatedfor multiple chiplets attached to a single level within the BEOLmetallization stack or at separate levels.

FIG. 10B illustrates the formation of trenches 1001 adjacent to chiplet810. Trenches 1001 are high-aspect ratio apertures made in filldielectric 122. Trenches 1001 extend from the top of fill dielectric 122to the top of BEOL stack 103, revealing metallization structures 803 inM4 (top level). Trenches 1001 have substantially straight sidewalls, andmay be formed by an anisotropic dry etch process capable of producingstraight etch structures, such as a DRIE etch as described above.Trenches 1001 may be etched through a hard mask having rectangularapertures overlapping or fully encompassing the sidewalls of chiplet810. The top of chiplet 810 may comprise a material capable ofperforming as an etch stop, such as silicon nitride. The etch-resistanttop of chiplet 810 may function as part of the trench aperture of theetch mask, where its rectangular footprint may define the innersidewalls of trenches 1001. A degree of chiplet misalignment may betolerated by self-alignment of the trenches 1001 to chiplet 810.

Trenches 1001 may be etched through fill dielectric 122 to the top ofBEOL stack 103. The z-height of trenches 1001 may be approximately equalto the z-height of chiplet 101. In some embodiments, fill dielectric 122may have a z-height that exceeds the z-height of chiplet 101 to embedother attached structures, such as a passive die (e.g., passiveinterconnect chiplet 211). Fill dielectric 122 may have a z-height thatexceeds the z-height of chiplet 101. The z-height of trenches 1001 maythen be greater than the z-height of chiplet 101. Z-heights of trenches1001 may be up to 20 microns from the top of BEOL stack 103 to the topof fill dielectric 122. The width of trenches 1001 may extend in the xdimension up to 20 microns from sidewalls 123. The length of trenchesextends in the y dimension above and below the plane of the figure up tothe length of sidewalls 123 of chiplet 810 (e.g., 100 microns).

In some embodiments, through-via openings 1002 are formed simultaneouslywith trenches 1001. Through-via openings 1002 may be cylindrical orrectangular in cross-section, having a diameter or width ranging up to1000-2000 nm. In the illustrated embodiment, through-via openings 1002are formed in over a portion of BEOL metallization stack 103 that isimmediately adjacent to chiplet 810. In alternate embodiments, throughvia openings 1002 are formed over a more distant portion of BEOLmetallization stack.

FIG. 10C illustrates the formation of cantilevered vias 801 by a filloperation of trenches 1001. Trenches 1001 may be filled by a metaldeposition process such as metal CVD, electroless deposition or galvanicelectroplating of suitable metals such as, but not limited to, copper,copper-aluminum alloy, aluminum, nickel, gold and silver. A thin barrierlayer (e.g., 1-10 nm) comprising any of titanium, tantalum, tungstenand/or their nitrides, may be pre-formed before bulk metal deposition bythin film deposition methods such as evaporation or sputtering. A thincopper or nickel seed layer formed by similar physical depositiontechniques may be present for initiating electroplating of bulk metal,or performing as a nucleation surface for CVD of metal into trenches1001.

Through-via openings 1002 may be filled during the same fill operation,forming through vias 124 simultaneously with the formation ofcantilevered vias 801. Sidewalls of through-via openings 1002 may alsobe coated with a barrier layer, followed by a seed layer.

FIG. 10D illustrates the formation of metallization level M5 andformation of metallization features in M5. Through-vias 124 are grownwithin through-via openings 1002, interconnecting metallization features106 in level M4 to pads 3 in level M5. Pads 203 may form as overhangsfrom lateral overgrowth onto the top of fill dielectric 122 after growthof through-vias 124 to the top of fill dielectric 122. Metallizationfeatures in level M5 may be formed by sheet deposition of a metal layerover the top surface of fill dielectric 122 after formation ofcantilever vias 801 and through-vias 124, and subsequent patterning ofthe metal layer. In some embodiments, pads 203 are formed by alithographic metal etch process of the metal layer.

FIG. 10E illustrates an exemplary completed BEOL stack 103 andinterconnection to substrate 1005. During the creation of metallizationlevel M5, interconnections 803 may be formed by through-mask etchingbetween cantilever vias 801 to metal features 803 (e.g., powerterminals) on top of chiplet 810. BEOL stack 103 may be completed toFLIs 130 on the top level by formation of higher metallization levelsM6-M9 above chiplet 810. Cantilevered vias 801 may be coupled to powerrouting on a package substrate

FIG. 11 illustrates a block diagram of computing device 1100 as part ofa system-on-chip (SoC) package comprising a composite die (e.g.,composite die 100) in an implementation of a computing device, accordingto some embodiments of the disclosure.

According to some embodiments, computing device 1100 represents aserver, a desktop workstation, or a mobile workstation, such as, but notlimited to, a laptop computer, a computing tablet, a mobile phone orsmart-phone, a wireless-enabled e-reader, or other wireless mobiledevice. An IC package, such as, but not limited to, a single- ormulti-core microprocessor (e.g., representing a central processing unit.In some embodiments, the IC package comprises a composite die structure(e.g., any of composite dies 100, 200, 250, 700, 750, 760 or 800),comprising a chiplet die (e.g., any of chiplet dies 101, 701 or 810),according to the embodiments of the disclosure.

In some embodiments, computing device has wireless connectivity (e.g.,Bluetooth, WiFi and 5G network). It will be understood that certaincomponents are shown generally, and not all components of such a deviceare shown in computing device 1100.

The various embodiments of the present disclosure may also comprise anetwork interface within 1170 such as a wireless interface so that asystem embodiment may be incorporated into a wireless device, forexample, cell phone or personal digital assistant. The wirelessinterface includes a millimeter wave generator and antenna array.

According to some embodiments, processor 1110 represents a CPU or a GPU,and can include one or more physical devices, such as microprocessors,application processors, microcontrollers, programmable logic devices, orother processing means. The processing operations performed by processor1110 include the execution of an operating platform or operating systemon which applications and/or device functions are executed. Theprocessing operations include operations related to I/O (input/output)with a human user or with other devices, operations related to powermanagement, and/or operations related to connecting the computing device1100 to another device. The processing operations may also includeoperations related to audio I/O and/or display I/O.

In one embodiment, computing device 1100 includes audio subsystem 1120,which represents hardware (e.g., audio hardware and audio circuits) andsoftware (e.g., drivers, codecs) components associated with providingaudio functions to the computing device. Audio functions can includespeaker and/or headphone output, as well as microphone input. Devicesfor such functions can be integrated into computing device 1100, orconnected to the computing device 1100. In one embodiment, a userinteracts with the computing device 1100 by providing audio commandsthat are received and processed by processor 1110

Display subsystem 1130 represents hardware (e.g., display devices) andsoftware (e.g., drivers) components that provide a visual and/or tactiledisplay for a user to interact with the computing device 1100. Displaysubsystem 1130 includes display interface 1132 which includes theparticular screen or hardware device used to provide a display to auser. In one embodiment, display interface 1132 includes logic separatefrom processor 1110 to perform at least some processing related to thedisplay. In one embodiment, display subsystem 1130 includes a touchscreen (or touch pad) device that provides both output and input to auser.

I/O controller 1140 represents hardware devices and software componentsrelated to interaction with a user. I/O controller 1140 is operable tomanage hardware that is part of audio subsystem 1120 and/or displaysubsystem 1130. Additionally, I/O controller 1140 illustrates aconnection point for additional devices that connect to computing device1100 through which a user might interact with the system. For example,devices that can be attached to the computing device 1100 might includemicrophone devices, speaker or stereo systems, video systems or otherdisplay devices, keyboard or keypad devices, or other I/O devices foruse with specific applications such as card readers or other devices.

As mentioned above, I/O controller 1140 can interact with audiosubsystem 1120 and/or display subsystem 1130. For example, input througha microphone or other audio device can provide input or commands for oneor more applications or functions of the computing device 1100.Additionally, audio output can be provided instead of, or in addition todisplay output. In another example, if display subsystem 1130 includes atouch screen, the display device also acts as an input device, which canbe at least partially managed by I/O controller 1140. There can also beadditional buttons or switches on the computing device 1100 to provideI/O functions managed by I/O controller 1140.

In one embodiment, I/O controller 1140 manages devices such asaccelerometers, cameras, light sensors or other environmental sensors,or other hardware that can be included in the computing device 1100. Theinput can be part of direct user interaction, as well as providingenvironmental input to the system to influence its operations (such asfiltering for noise, adjusting displays for brightness detection,applying a flash for a camera, or other features).

In one embodiment, computing device 1100 includes power management 1150that manages battery power usage, charging of the battery, and featuresrelated to power saving operation. Memory subsystem 1160 includes memorydevices for storing information in computing device 1100. Memory caninclude nonvolatile (state does not change if power to the memory deviceis interrupted) and/or volatile (state is indeterminate if power to thememory device is interrupted) memory devices. Memory subsystem 1160 canstore application data, user data, music, photos, documents, or otherdata, as well as system data (whether long-term or temporary) related tothe execution of the applications and functions of the computing device1100.

Elements of embodiments are also provided as a machine-readable medium(e.g., memory 1160) for storing the computer-executable instructions.The machine-readable medium (e.g., memory 1160) may include, but is notlimited to, flash memory, optical disks, CD-ROMs, DVD ROMs, RAMs,EPROMs, EEPROMs, magnetic or optical cards, phase change memory (PCM),or other types of machine-readable media suitable for storing electronicor computer-executable instructions. For example, embodiments of thedisclosure may be downloaded as a computer program (e.g., BIOS) whichmay be transferred from a remote computer (e.g., a server) to arequesting computer (e.g., a client) by way of data signals via acommunication link (e.g., a modem or network connection).

Connectivity via network interface 1170 includes hardware devices (e.g.,wireless and/or wired connectors and communication hardware) andsoftware components (e.g., drivers, protocol stacks) to enable thecomputing device 1100 to communicate with external devices. Thecomputing device 1100 could be separate devices, such as other computingdevices, wireless access points or base stations, as well as peripheralssuch as headsets, printers, or other devices.

Network interface 1170 can include multiple different types ofconnectivity. To generalize, the computing device 1100 is illustratedwith cellular connectivity 1172 and wireless connectivity 1174. Cellularconnectivity 1172 refers generally to cellular network connectivityprovided by wireless carriers, such as provided via GSM (global systemfor mobile communications) or variations or derivatives, CDMA (codedivision multiple access) or variations or derivatives, TDM (timedivision multiplexing) or variations or derivatives, or other cellularservice standards. Wireless connectivity (or wireless interface) 1174refers to wireless connectivity that is not cellular, and can includepersonal area networks (such as Bluetooth, Near Field, etc.), local areanetworks (such as Wi-Fi), and/or wide area networks (such as WiMax), orother wireless communication.

Peripheral connections 1180 include hardware interfaces and connectors,as well as software components (e.g., drivers, protocol stacks) to makeperipheral connections. It will be understood that the computing device1100 could both be a peripheral device (“to” 1182) to other computingdevices, as well as have peripheral devices (“from” 1184) connected toit. The computing device 1100 commonly has a “docking” connector toconnect to other computing devices for purposes such as managing (e.g.,downloading and/or uploading, changing, synchronizing) content oncomputing device 1100. Additionally, a docking connector can allowcomputing device 1100 to connect to certain peripherals that allow thecomputing device 1100 to control content output, for example, toaudiovisual or other systems.

In addition to a proprietary docking connector or other proprietaryconnection hardware, the computing device 1100 can make peripheralconnections 1180 via common or standards-based connectors. Common typescan include a Universal Serial Bus (USB) connector (which can includeany of a number of different hardware interfaces), DisplayPort includingMiniDisplayPort (MDP), High Definition Multimedia Interface (HDMI),Firewire, or other types.

Furthermore, the particular features, structures, functions, orcharacteristics may be combined in any suitable manner in one or moreembodiments. For example, a first embodiment may be combined with asecond embodiment anywhere the particular features, structures,functions, or characteristics associated with the two embodiments arenot mutually exclusive.

While the disclosure has been described in conjunction with specificembodiments thereof, many alternatives, modifications and variations ofsuch embodiments will be apparent to those of ordinary skill in the artin light of the foregoing description. The embodiments of the disclosureare intended to embrace all such alternatives, modifications, andvariations as to fall within the broad scope of the appended claims.

In addition, well known power/ground connections to integrated circuit(IC) chips and other components may or may not be shown within thepresented figures, for simplicity of illustration and discussion, and soas not to obscure the disclosure. Further, arrangements may be shown inblock diagram form in order to avoid obscuring the disclosure, and alsoin view of the fact that specifics with respect to implementation ofsuch block diagram arrangements are highly dependent upon the platformwithin which the present disclosure is to be implemented (i.e., suchspecifics should be well within purview of one skilled in the art).Where specific details (e.g., circuits) are set forth in order todescribe example embodiments of the disclosure, it should be apparent toone skilled in the art that the disclosure can be practiced without, orwith variation of, these specific details. The description is thus to beregarded as illustrative instead of limiting.

The following examples pertain to further embodiments. Specifics in theexamples may be used anywhere in one or more embodiments. All optionalfeatures of the apparatus described herein may also be implemented withrespect to a method or process.

Example 1 is an integrated circuit (IC) device structure, comprising ahost chip comprising a first device layer and a first metallizationlayer, a chiplet comprising a second device layer and a secondmetallization layer interconnected to transistors of the second devicelayer; and a top metallization layer comprising a plurality of firstlevel interconnect (FLI) interfaces, wherein the chiplet is embeddedbetween a first portion of the first device layer and the topmetallization layer, and wherein the first portion of the first devicelayer is interconnected to the top metallization layer by one or moreconductive vias extending through the second device layer or adjacent toan edge sidewall of the chiplet.

Example 2 includes all of the features of example 1, further comprisingone or more second conductive vias that interconnect the firstmetallization layer to a backside of the second device layer.

Example 3 includes all of the features of examples 1 and 2, wherein thechiplet includes a third metallization layer on a side of the seconddevice layer opposite the second metallization layer, and the one ormore conductive vias extend through the second device layer andinterconnect the second metallization layer to the third metallizationlayer.

Example 4 includes all of the features of example 3, further comprisinga dielectric material over both the chiplet and a second portion of thefirst device layer adjacent to the chiplet, and wherein one or moreadditional conductive vias extend through the dielectric material andinterconnect the first metallization layer to the second or thirdmetallization layer.

Example 5 includes all of the features of any one of examples 1 through4, further comprising a dielectric material substantially planar with asurface of the chiplet and over a second portion of the first devicelayer adjacent to the chiplet, and wherein one or more additionalconductive vias extend through the dielectric material and interconnectthe first metallization layer to the second portion of the first devicelayer.

Example 6 includes all of the features of any one of examples 1 through5, further comprising a passive interconnect chiplet over a secondportion of the first device layer, the passive interconnect chipletcomprising one or more metallization layers, and wherein a dielectricmaterial is between a sidewall of the chiplet and a sidewall of thepassive interconnect chiplet, and wherein metallization layers of thepassive interconnect chiplet interconnect the first metallization layerto the second portion of the first device layer.

Example 7 includes all of the features of example 6, further comprisinga second dielectric material over the chiplet and over the passiveinterconnect chiplet, and wherein one or more additional conductive viasextend through the second dielectric to interconnect the chiplet and thepassive interconnect chiplet to the first metallization layer.

Example 8 includes all of the features of any one of examples 1 through7, wherein the edge sidewall of the chiplet has a first length, andwherein the conductive vias comprise a via that is adjacent to the edgesidewall and that has a lateral dimension at least equal to half of thefirst length.

Example 9 includes all of the features of example 8, wherein theconductive vias comprise one or more vias adjacent to two or moreintersecting edge sidewalls of the chiplet.

Example 10 includes all of the features of any one of examples 1 through9, wherein the one or more vias adjacent to the two or more intersectingedge sidewalls comprises a single via that is adjacent to at least threeedge sidewalls of the chiplet.

Example 11 includes all of the features of any one of examples 1 through10, wherein the chiplet has a first thickness and the structure furthercomprises one or more thick metallization traces between the pluralityof FLI interfaces and a second portion of the first device layer,adjacent to the first portion, and wherein the thick metallizationtraces have a thickness of at least half the first thickness.

Example 12 includes all of the features of example 11, wherein a topsurface of the conductive vias are substantially planar with a topsurface of the thick metallization trace.

Example 13 includes all of the features of any one of examples 1 through12, further comprising a second chiplet embedded within the host chipbetween the first metallization layer and a second portion of the firstdevice layer, adjacent to the first portion, wherein the second chipletcomprises a third device layer and one or more metallization layersinterconnected to transistors of the third device layer, and wherein thetop metallization layer is interconnected to the second portion of thefirst device layer through one or more additional vias that extendthrough the third device layer, or adjacent to an edge sidewall of thesecond chiplet.

Example 14 includes all of the features of example 13, wherein the firstchiplet has a first thickness, and the second chiplet is spaced apartfrom the second portion of the first device layer by a thickness that isat least equal to the first thickness.

Example 15 is a system comprising a processing unit comprising amicroprocessor coupled to a memory; and an integrated circuit (IC)device structure coupled to the processing unit, the IC device structurecomprising a host chip comprising a first device layer and a firstmetallization layer a chiplet comprising a second device layer and asecond metallization layer interconnected to transistors of the seconddevice layer; and a top metallization layer comprising a plurality offirst level interconnect (FLI) interfaces, wherein the chiplet isembedded between a first portion of the first device layer and the topmetallization layer, and wherein the first portion of the first devicelayer is interconnected to the top metallization layer by one or moreconductive vias extending through the second device layer or adjacent toan edge sidewall of the chiplet.

Example 16 includes all of the features of example 15, wherein theconductive vias interconnect a power port of the substrate with a powersink within the chip or chiplet.

Example 17 includes all of the features of examples 15 or 16, whereinthe one or more vias interconnect a data port of the substrate to a dataI/O of the chip or chiplet.

Example 18 is a method for fabricating an IC device structure, themethod comprising forming a first metallization layer over a first andsecond portion of a first device layer; bonding to a chiplet over thefirst portion of the first device layer, the chiplet comprising a seconddevice layer; forming one or more conductive vias through the seconddevice layer or adjacent to an edge sidewall of the chiplet; and forminga top metallization layer over the chiplet and over the second portionof the first device layer, wherein the top metallization layer comprisesa plurality of first level interconnect (FLI) interfaces.

An abstract is submitted with the understanding that it will not be usedto limit the scope or meaning of the claims. The following claims arehereby incorporated into the detailed description, with each claimstanding on its own as a separate embodiment.

We claim:
 1. A method for fabricating an IC device structure, the methodcomprising: forming a first metallization layer over first and secondregions of a first device layer; bonding a chiplet over the first regionof the first device layer, the chiplet comprising a second device layerand a second metallization layer, wherein said bonding positions thesecond device layer between the first device layer and the secondmetallization layer; forming one or more conductive vias through thesecond device layer or adjacent to an edge sidewall of the chiplet; andforming a top metallization layer over the chiplet and over the secondregion of the first device layer, wherein the top metallization layercomprises a plurality of first level interconnect (FLI) interfaces. 2.The method of claim 1, further comprising forming one or more secondconductive vias that interconnect the first metallization layer to abackside of the second device layer.
 3. The method of claim 1, furthercomprising bonding a second chiplet between the top metallization layerand the second region of the first device layer, wherein the secondchiplet comprises a third device layer and one or more thirdmetallization layers interconnected to transistors of the third devicelayer, and wherein the top metallization layer is interconnected to thesecond region of the first device layer through one or more additionalvias that extend through the third device layer or adjacent to an edgesidewall of the second chiplet.
 4. The method of claim 3, wherein thechiplet has a first thickness, and the second chiplet is verticallyspaced apart from the second region of the first device layer by athickness that is at least equal to the first thickness.
 5. The methodof claim 3, further comprising bonding a passive interconnect chipletbetween the second chiplet and the second region of the first devicelayer, the passive interconnect chiplet comprising one or moremetallization layers to interconnect the second chiplet to the firstmetallization layer.
 6. The method of claim 5, further comprisingproviding a dielectric material over the chiplet and between the passiveinterconnect chiplet and the second chiplet.
 7. The method of claim 1,wherein bonding the chiplet over the first region of the first devicelayer comprises a hybrid bonding process.
 8. The method of claim 1,further comprising forming one or more second conductive vias within afill dielectric adjacent the chiplet and over the second region of thefirst device layer, wherein the one or more second conductive viascouple the second region of the first device layer to the topmetallization layer.
 9. The method of claim 8, further comprisingforming a dielectric layer over the chiplet and the fill dielectric. 10.The method of claim 9, further comprising forming a plurality of thirdconductive vias within the dielectric layer, the third conductive viasto couple the one or more conductive vias to the top metallizationlayer.
 11. A method for fabricating an IC device structure, the methodcomprising: forming a first metallization layer over first and secondregions of a first device layer; bonding a chiplet over the first regionof the first device layer, the chiplet comprising a second device layer;forming one or more conductive vias adjacent to an edge sidewall of thechiplet, wherein forming the one or more conductive vias adjacent to theedge sidewall of the chiplet comprises embedding the chiplet in a filldielectric, forming a trench in the fill dielectric adjacent the edgesidewall, and filling the trench with a metal; and forming a topmetallization layer over the chiplet and over the second region of thefirst device layer, wherein the top metallization layer comprises aplurality of first level interconnect (FLI) interfaces.
 12. The methodof claim 11, wherein the trench extends from the top of the filldielectric to a top of a metallization structure of the firstmetallization layer.
 13. The method of claim 11, wherein forming thetrench comprises etching the trench through a hardmask aperture that atleast partially encompasses the edge sidewall.
 14. The method of claim13, wherein a portion of the chiplet within the hardmask aperturecomprise an etch stop material.
 15. The method of claim 11, whereinforming the one or more conductive vias comprises forming a firstconductive via adjacent to the edge sidewall and a second conductive viaadjacent to a second edge sidewall of the chiplet opposite the edgesidewall, wherein the first and second conductive vias have differingwidths in response to misalignment of the chiplet in a direction runningbetween the edge sidewall and the second edge sidewall.
 16. A method forfabricating an IC device structure, the method comprising: forming afirst metallization layer over first and second regions of a firstdevice layer; bonding a chiplet over the first region of the firstdevice layer, the chiplet comprising a second device layer; forming oneor more conductive vias adjacent to an edge sidewall of the chiplet,wherein a first conductive via of the one or more conductive vias is onthe edge sidewall of the chiplet; and forming a top metallization layerover the chiplet and over the second region of the first device layer,wherein the top metallization layer comprises a plurality of first levelinterconnect (FLI) interfaces.
 17. The method of claim 16, wherein thefirst conductive via is in contact with a metallization structure of thefirst metallization layer and a pad or trace on a top of the chiplet,the metallization structure extending between the first region and abottom of the chiplet.
 18. The method of claim 16, wherein the one ormore conductive vias comprise a second conductive via adjacent to asecond edge sidewall of the chiplet opposite the edge sidewall of thechiplet, wherein the first and second conductive vias have differingwidths in response to misalignment of the chiplet in a direction runningbetween the edge sidewall and the second edge sidewall.
 19. The methodof claim 16, wherein forming the one or more conductive vias adjacent tothe edge sidewall of the chiplet comprises embedding the chiplet in afill dielectric, forming a trench in the fill dielectric, and fillingthe trench with a metal.